14-ая Международная конференция "Взаимодействие излучений с твердым телом" (Interaction of radiation with solids)
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Fedotov Alexander
CARRIER TRANSPORT MECHANISMS IN ION-IMPLANTED SILICON-ON-INSULATOR STRUCTURES WITH InSb CLUSTERS
by Alexander Fedotov - Wednesday, 15 Сентябрь 2021, 05:57 PM
 

 

In this paper, we examine carrier transport mechanisms in Silicon-on-Insulator (SOI) structures, containing InSb nanoparticles in SiO2 layer, before and after annealing at 1273 K. The comparison of temperature dependences of current-voltage (I-V) characteristics allowed us to determine the mechanisms of carrier transport (hopping and zone-like) in this nanostructures and estimate some transport parameters in the temperature range of 2-300 K. The measurements have confirmed the presence of Fouler-Nordheim and hopping mechanism contributions into low-temperature I-V characteristics of the studied SOI structures.